dmg7410sfg document number: ds35108 rev. 8 - 2 1 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product n - channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t a = + 25c 3 0v 20 m? @ v gs = 10v 8.0 a 2 7 m? @ v gs = 4.5v 6.5 a description this mosfe t is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? ? ? feature s ? ds(on) C ? ? ? ? ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? ? 3333 - 8 ? molded plastic, green molding compound ? ? ? ? ? ordering information (note 4 ) part number case packaging dm g7410 sfg - 7 powerdi3333 - 8 2 , 0 00 / tape & reel dm g7410sfg - 13 powerdi3333 - 8 3 , 000 / tape & reel notes: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu ( rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and ant imony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http : //www.diodes.com/products/packages.htm l . markin g information powerdi is a registered trademark of diodes incorporated . bottom view top view inter nal schematic top view powerdi3333 - 8 g74 = product m arking c ode yyww = date c ode m arking yy = last d igit of y ear (ex: 10 for 2010) ww = week c ode (01 C 53) n39 = product m arking c ode yyww = date c ode m arking yy = last d igit of y ear (ex: 10 for 2010) ww = week c ode (01 C 53) 1 2 3 4 8 7 6 5 g74 y y w w s s s g d d d d pin 1 n39 y y w w green
dmg7410sfg document number: ds35108 rev. 8 - 2 2 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 3 0 v gate - source voltage v gss 25 v continuous drain current (note 5 ) v gs = 10v steady state t a = + 25c t a = + 70 c i d 5.3 4.2 a continuous drain current (note 6 ) v gs = 10v steady state t a = + 25c t a = + 70 c i d 8.0 6.3 a continuous drain current (note 6 ) v gs = 10v t ??? 10s t a = + 25c t a = + 70 c i d 9.5 7.7 a continuous drain current (note 6 ) v gs = 4.5v steady state t a = + 25c t a = + 70 c i d 6.5 4.9 a continuous drain current (note 6 ) v gs = 4.5v t ??? 10s t a = + 25c t a = + 70 c i d 7.8 6.2 a pulsed drain current (no te 7 ) i dm 70 a avalanche current (notes 7 & 8 ) i ar 1 8 a repetitive avalanche energy (notes 7 & 8 ) l = 0.1mh e ar 16 mj thermal characteristics characteristic symbol max unit power dissipation (note 5 ) p d 1.0 w thermal resi stance, junction to ambient @t a = + 25c (note 5 ) r ja 130.6 c/w power dissipation (note 6 ) p d 2.07 w thermal resistance, junction to ambient @t a = + 25c (note 6 ) r ja 62.5 c/w power dissipation (note 6 ) t ??? 10s p d 3.0 w thermal resistance, junction to ambient @t a = + 25c (note 6 ) t ??? 10 s r ja 43.8 c/w operating and storage temperature range t j , t stg - 55 to +150 c notes: 5. device mounted on fr - 4 pcb with minimum recommended pad layout, single sided. 6 . device mounted on 2 x 2 fr - 4 pcb with high coverage 2 oz. copper , single sid ed. 7. repetitive rating, pulse width limited by junction temperature. 8 . i ar and e ar rating are based on low frequency and duty cycles to keep t j = + 25 c.
dmg7410sfg document number: ds35108 rev. 8 - 2 3 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product electrical characterist ics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss 3 0 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = + 25c i dss - - 0.1 a v ds = 3 0 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 25 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) 0.8 1.2 2.0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 13.5 20 m v gs = 10 v, i d = 1 0 a - 22 2 7 v gs = 4.5 v, i d = 7.5 a forward transfer admittance |y fs | - 13.0 - s v ds = 5 v, i d = 1 0 a diode forward voltage v sd - 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 10 ) input capacitance c iss - 580 - pf v ds = 15 v, v gs = 0v , f = 1.0mh z output capacitance c oss - 110 - reverse transfer capacitance c rss - 70 - gate resistance r g - 2. 0 3.0 v ds = 0 v, v gs = 0v , f = 1mhz total gate charge v gs = 4.5v q g - 5.3 - nc v gs = 4.5 v, v ds = 15 v, i d = 1 0 a total gate charge v gs = 10v q g - 11.3 - v gs = 10 v, v ds = 15 v, i d = 1 0 a gate - source charge q gs - 1. 9 - gate - drain charge q gd - 1. 9 - turn - on delay time t d(on) - 4.4 - ns v gs = 10 v, v ds = 15 v, r l = 1 5 , r g = 6 turn - on rise time t r - 4.6 - ns turn - off delay time t d(off) - 19.5 - ns turn - off fall time t f - 5.8 - ns bodyy diode reverse recovery time t rr - 12.6 - ns if=8a, di/dt=500a/ s body diode reverse recovery charge q rr - 10.5 - nc notes: 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject to production testing. 0.1 1 10 100 v , drain-source voltage (v) fig. 1 soa, safe operation area ds 0.01 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w t = 150c t = 25c single pulse j(max) a 0 50 100 150 200 250 300 350 400 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) single pulse r = 60 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja j a ja(t) ?
dmg7410sfg document number: ds35108 rev. 8 - 2 4 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r = r * r ? ja(t) (t) ? ? ja ja r = 60 c/w duty cycle, d = t1/t2 ? d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse fig. 4 typical output characteristic v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 4.0v gs v = 10v gs fig. 5 typical transfer characteristic v , gate-source voltage (v) gs i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 85c gs v = 125c gs v = 25c gs v = -55c gs v = 150c gs v = 5v ds 0 10 20 15 25 30 fig. 6 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.004 0.008 0.012 0.016 0.02 0.024 0.028 0.032 v = 4.5v gs v = 10v gs 0 5 10 15 20 25 30 i , drain current (a) d fig. 7 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 t = 85c a t = 25c a t = -55c a t = 150c a v = 4.5v gs t = 125c a
dmg7410sfg document number: ds35108 rev. 8 - 2 5 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product fig. 8 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n 0.6 0.8 1 1.2 1.4 1.6 v = 4.5v i = 5a gs d v = 10v i = 10a gs d fig. 9 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 v = 4.5v i = 5a gs d v = 10v i = 10a gs d fig. 10 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 i = 1ma d i = 250a d 0 0.4 0.6 0.8 1.0 1.2 fig. 11 diode forward voltage vs. current v , source-drain voltage (v) sd i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 5 10 15 20 25 30 0.2 0 4 8 12 16 20 fig. 12 typical total capacitance v , drain-source voltage (v) ds 10 1,000 c , c a p a c i t a n c e ( p f ) t 100 f = 1mhz c iss c rss c oss 0 10 20 30 fig. 13 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 1,000 10,000 i , l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a
dmg7410sfg document number: ds35108 rev. 8 - 2 6 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. powerdi ? 3333 - 8 powerdi ? 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? b 0.27 0.37 0.32 b2 ? ? ? ? d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? z ? ? ? ? all dimensions in mm suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap0200 1 .pdf for the latest version. powerdi ? 3333 - 8 dime nsions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dmg7410sfg document number: ds35108 rev. 8 - 2 7 of 7 www.diodes.com july 2015 ? diodes incorporated dmg7410sfg new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the righ t to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this docu ment or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever i n respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representat ives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by o ne or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated i nto multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical componen ts in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body , or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is an y component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incor porated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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